Publication:

Investigation of trapping effects on Au-free AlGaN/GaN Schottky diodes fabricated on C-doped buffer layers

Date

2015
Meeting abstract
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dc.contributor.authorHu, Jie
dc.contributor.authorStoffels, Steve
dc.contributor.authorLenci, Silvia
dc.contributor.authorYou, Shuzhen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorVenegas, Rafael
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-22T19:46:34Z
dc.date.available2021-10-22T19:46:34Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25400
dc.source.conferenceInternational Conference on Nitride Semiconductors - ICNS-11
dc.source.conferencedate30/08/2015
dc.source.conferencelocationBeijing China
dc.title

Investigation of trapping effects on Au-free AlGaN/GaN Schottky diodes fabricated on C-doped buffer layers

dc.typeMeeting abstract
dspace.entity.typePublication
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