Cost efficient Infrared Laser debonding technology enabled by Si carrier reuse

Abstract

Temporary bonding and debonding techniques are essential for advanced semiconductor processing, particularly in 3D and 2.5 D integration. Conventional methods using polymer adhesives and UV laser debonding face limitations including low thermal stability, high total thickness variation (TTV), and poor mechanical alignment, associated with the use of glass carrier wafers. This paper further assesses a novel infrared (IR) laser debonding process based on a fully inorganic bonding stack deposited on reusable silicon carriers. The proposed technology enables higher temperature processing, improved wafer thinning and wider applicability due to the use of Si carrier instead of glass. A comparative cost-of-ownership (CoO) analysis between the IR laser release and full wafer grinding approach demonstrates substantial savings when carrier reuse is implemented. Cleaning strategies for both device and carrier wafers are evaluated, and stack optimizations are proposed to further reduce costs while maintaining process performance. These findings support the viability of IR laser debonding as a scalable and cost-effective solution for nextgeneration packaging technologies.