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AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE

Date

2008
Journal article
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dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDerluyn, Joff
dc.contributor.authorBalachander, Krishnan
dc.contributor.authorDegroote, Stefan
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-17T06:30:13Z
dc.date.available2021-10-17T06:30:13Z
dc.date.issued2008
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13507
dc.source.beginpage1600
dc.source.endpage1602
dc.source.issue6
dc.source.journalPhysica Status Solidi C
dc.source.volume5
dc.title

AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE

dc.typeJournal article
dspace.entity.typePublication
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