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A new way to selectively remove Si islands from polycrystalline silicon seed layers made by aluminium-induced crystallization

Date

2008
Journal article
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dc.contributor.authorVan Gestel, Dries
dc.contributor.authorGordon, Ivan
dc.contributor.authorVerbist, Agnes
dc.contributor.authorCarnel, Lodewijk
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorPoortmans, Jef
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-10-17T11:48:37Z
dc.date.available2021-10-17T11:48:37Z
dc.date.issued2008
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14642
dc.identifier.urlhttp://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TW0-4RDR180-D&_user=799533&_coverDate=08%2F30%2F2008&_alid=823070372&
dc.source.beginpage6907
dc.source.endpage6911
dc.source.issue20
dc.source.journalThin Solid Films
dc.source.volume516
dc.title

A new way to selectively remove Si islands from polycrystalline silicon seed layers made by aluminium-induced crystallization

dc.typeJournal article
dspace.entity.typePublication
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