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Permanent wafer bonding in the low temperature by using various plasma enhanced chemical vapour deposition dielectrics

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dc.contributor.authorKim, Soon-Wook
dc.contributor.authorPeng, Lan
dc.contributor.authorMiller, Andy
dc.contributor.authorBeyer, Gerald
dc.contributor.authorBeyne, Eric
dc.contributor.authorLee, Chung Sun
dc.contributor.imecauthorKim, Soon-Wook
dc.contributor.imecauthorPeng, Lan
dc.contributor.imecauthorMiller, Andy
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorBeyne, Eric
dc.contributor.orcidimecPeng, Lan::0000-0003-1824-126X
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.date.accessioned2021-10-22T20:09:29Z
dc.date.available2021-10-22T20:09:29Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25477
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7334576
dc.source.beginpageTS7.2
dc.source.conferenceIEEE International 3D Systems Integration Conference -3DIC
dc.source.conferencedate31/08/2015
dc.source.conferencelocationSendai Japan
dc.title

Permanent wafer bonding in the low temperature by using various plasma enhanced chemical vapour deposition dielectrics

dc.typeProceedings paper
dspace.entity.typePublication
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