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Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF

Date

2007
Journal article
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dc.contributor.authorSan Andres Serrano, Enrique
dc.contributor.authorPantisano, Luigi
dc.contributor.authorRamos, Javier
dc.contributor.authorRoussel, Philippe
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T19:21:48Z
dc.date.available2021-10-16T19:21:48Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12836
dc.source.beginpage1705
dc.source.endpage1712
dc.source.issue7
dc.source.journalIEEE Trans. Electron Devices
dc.source.volume54
dc.title

Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF

dc.typeJournal article
dspace.entity.typePublication
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