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Resistive switching-like behaviour of the dielectric breakdown in ultra-thin Hf based gate stacks in mosfets
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Resistive switching-like behaviour of the dielectric breakdown in ultra-thin Hf based gate stacks in mosfets
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Date
2010
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Crespo-yepes, A.
;
Martin-Martinez, J.
;
Rodriguez, R.
;
Nafria, M.
;
Aymerich, X.
;
Rothschild, Aude
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Acq. date: 2025-12-09
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Views
1922
since deposited on 2021-10-18
1
last month
1
last week
Acq. date: 2025-12-09
Citations