Publication:

Comparison of InGaAs and InAIAs sacrificial layers for release of InP-based devices

Date

2017-12
Journal article
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dc.contributor.authorO'Callaghan, J.
dc.contributor.authorLoi, R.
dc.contributor.authorMura, E.E.
dc.contributor.authorRoycroft, B.
dc.contributor.authorTrindade, A.J.
dc.contributor.authorThomas, K.
dc.contributor.authorGocalinska, A.
dc.contributor.authorPelucchi, E.
dc.contributor.authorZhang, Jing
dc.contributor.authorRoelkens, Gunther
dc.contributor.authorBower, C.A.
dc.contributor.authorCorbett, B.
dc.contributor.imecauthorZhang, Jing
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.orcidimecZhang, Jing::0000-0001-6608-9990
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.date.accessioned2021-10-24T10:18:52Z
dc.date.available2021-10-24T10:18:52Z
dc.date.embargo9999-12-31
dc.date.issued2017-12
dc.identifier.issn2159-3930
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29099
dc.identifier.urlhttps://www.osapublishing.org/ome/abstract.cfm?URI=ome-7-12-4408
dc.source.beginpage4408
dc.source.endpage4414
dc.source.issue12
dc.source.journalOptical Materials Express
dc.source.volume7
dc.title

Comparison of InGaAs and InAIAs sacrificial layers for release of InP-based devices

dc.typeJournal article
dspace.entity.typePublication
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