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Atomic-Scale Investigations on the Wet Etching of Group IV Semiconductors in Acidic H2O2 Solution: The Case Ge Versus Si-Ge

Date

2021-05
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dc.contributor.authorvan Dorp, Dennis
dc.contributor.authorAbrenica, Graniel
dc.contributor.authorMayer, T.
dc.contributor.authorArnauts, Sophia
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.imecauthorAbrenica, Graniel
dc.contributor.imecauthorArnauts, Sophia
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecAltamirano Sanchez, Efrain::0000-0003-3235-6055
dc.date.accessioned2022-05-10T09:20:25Z
dc.date.available2021-11-30T16:46:57Z
dc.date.available2022-05-10T09:20:25Z
dc.date.embargo2021-05-30
dc.date.issued2021-05
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38502
dc.source.conferenceThe Electrochemical Society
dc.source.conferencedateMay 30 2021
dc.source.conferencelocationOnline
dc.source.journalECS Electrochemical society
dc.source.numberofpages1
dc.subject.disciplineMaterials science
dc.title

Atomic-Scale Investigations on the Wet Etching of Group IV Semiconductors in Acidic H2O2 Solution: The Case Ge Versus Si-Ge

dc.typeMeeting abstract
dspace.entity.typePublication
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