Publication:

Threshold voltage variations in semi-vertical GaN-on-Si FETs: A comprehensive study

Date

2019
Meeting abstract
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dc.contributor.authorMukherjee, Kalparupa
dc.contributor.authorBorga, Matteo
dc.contributor.authorRuzzarin, Maria
dc.contributor.authorStoffels, Steve
dc.contributor.authorGeens, Karen
dc.contributor.authorLiang, Hu
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.authorMeneghini, Matteo
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorRuzzarin, Maria
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-27T14:24:53Z
dc.date.available2021-10-27T14:24:53Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33631
dc.source.conference13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
dc.source.conferencedate7/07/2019
dc.source.conferencelocationSeattle, WA USA
dc.title

Threshold voltage variations in semi-vertical GaN-on-Si FETs: A comprehensive study

dc.typeMeeting abstract
dspace.entity.typePublication
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