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Observation of hot-carrier-induced nFET gate oxide breakdown in dynamically stressed CMOS circuits

Date

2002
Proceedings Paper
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dc.contributor.authorKaczer, Ben
dc.contributor.authorCrupi, Felice
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRoussel, Philippe
dc.contributor.authorCiofi, Ivan
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorCiofi, Ivan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecCiofi, Ivan::0000-0003-1374-4116
dc.date.accessioned2021-10-14T21:58:28Z
dc.date.available2021-10-14T21:58:28Z
dc.date.embargo9999-12-31
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6458
dc.source.beginpage171
dc.source.conferenceIEDM Technical Digest
dc.source.conferencedate9/12/2002
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage174
dc.title

Observation of hot-carrier-induced nFET gate oxide breakdown in dynamically stressed CMOS circuits

dc.typeProceedings paper
dspace.entity.typePublication
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