Publication:

Study of mask error enhancement factor improvement with low-n absorber extreme ultraviolet lithography mask

Date

2024
Journal article
https://doi.org/10.1117/1.JMM.23.4.044401
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dc.contributor.authorTakahata, Yosuke
dc.contributor.authorKovalevich, Tatiana
dc.contributor.authorDe Simone, Danilo
dc.contributor.authorTanaka, Yusuke
dc.contributor.authorPhilipsen, Vicky
dc.contributor.imecauthorKovalevich, Tatiana
dc.contributor.imecauthorDe Simone, Danilo
dc.contributor.imecauthorPhilipsen, Vicky
dc.contributor.orcidimecKovalevich, Tatiana::0000-0001-9633-8257
dc.contributor.orcidimecDe Simone, Danilo::0000-0003-3927-5207
dc.contributor.orcidimecPhilipsen, Vicky::0000-0002-2959-432X
dc.date.accessioned2025-08-25T07:48:56Z
dc.date.available2025-01-09T17:22:32Z
dc.date.available2025-08-25T07:48:56Z
dc.date.issued2024
dc.description.wosFundingTextThe authors would like to thank Kurt Ronse, Joost Bekaert, Balakumar Baskaran, Lieve van Look, Vincent Truffert, and Inhwan Lee from IMEC for support of this study; Ulrich Welling from Synopsys for support of S-Litho EUV simulation; Peter De Schepper from Inpria for supporting experimental study; and Akira Yoshida and Yangyin Chen from Western Digital GK for discussions and support. Parts of the manuscript were previously published as SPIE proceedings.20
dc.identifier.doi10.1117/1.JMM.23.4.044401
dc.identifier.issn1932-5150
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45053
dc.publisherSPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
dc.source.beginpageArt. 044401
dc.source.endpageN/A
dc.source.issue4
dc.source.journalJOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3
dc.source.numberofpages12
dc.source.volume23
dc.title

Study of mask error enhancement factor improvement with low-n absorber extreme ultraviolet lithography mask

dc.typeJournal article
dspace.entity.typePublication
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