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Threshold Voltage Instability in GaN HEMTs with p-type Gate: Mg Doping Compensation
Publication:
Threshold Voltage Instability in GaN HEMTs with p-type Gate: Mg Doping Compensation
Date
2019
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Tallarico, Andrea Natale
;
Stoffels, Steve
;
Posthuma, Niels
;
Decoutere, Stefaan
;
Sangiorgi, Enrico
;
Fiegna, Claudio
Journal
IEEE Electron Device Letters
Abstract
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1969
since deposited on 2021-10-27
Acq. date: 2025-10-23
Citations
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Views
1969
since deposited on 2021-10-27
Acq. date: 2025-10-23
Citations