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Vapor phase doping and sub-melt laser anneal for ultra-shallow extension junctions in sub-32 nm CMOS technology
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Vapor phase doping and sub-melt laser anneal for ultra-shallow extension junctions in sub-32 nm CMOS technology
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Date
2009-09
Proceedings Paper
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18838.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nguyen, Duy
;
Rosseel, Erik
;
Takeuchi, Shotaro
;
Everaert, Jean-Luc
;
Loo, Roger
;
Goossens, Jozefien
;
Moussa, Alain
;
Clarysse, Trudo
;
Vandervorst, Wilfried
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1857
since deposited on 2021-10-18
Acq. date: 2025-12-15
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Downloads
1
since deposited on 2021-10-18
Acq. date: 2025-12-15
Views
1857
since deposited on 2021-10-18
Acq. date: 2025-12-15
Citations