Publication:

Si-passivated Ge nFET towards a reliable Ge CMOS

Date

2016
Proceedings Paper
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dc.contributor.authorArimura, Hiroaki
dc.contributor.authorSioncke, Sonja
dc.contributor.authorCott, Daire
dc.contributor.authorMitard, Jerome
dc.contributor.authorVanherle, Wendy
dc.contributor.authorLoo, Roger
dc.contributor.authorFranco, Jacopo
dc.contributor.authorConard, Thierry
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMertens, Hans
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorHeyns, Marc
dc.contributor.authorMocuta, Anda
dc.contributor.authorThean, Aaron
dc.contributor.authorMocuta, Dan
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-23T10:04:48Z
dc.date.available2021-10-23T10:04:48Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26291
dc.source.beginpageO-1-01
dc.source.conferenceInternational Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate26/09/2016
dc.source.conferencelocationTsukuba Japan
dc.title

Si-passivated Ge nFET towards a reliable Ge CMOS

dc.typeProceedings paper
dspace.entity.typePublication
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