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Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current
Publication:
Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current
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Date
2013
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Chen, Yangyin
;
Komura, Masanori
;
Degraeve, Robin
;
Govoreanu, Bogdan
;
Goux, Ludovic
;
Fantini, Andrea
;
Raghavan, Naga
;
Clima, Sergiu
;
Zhang, Leqi
;
Belmonte, Attilio
;
Redolfi, Augusto
;
Kar, Gouri Sankar
;
Groeseneken, Guido
;
Wouters, Dirk
;
Jurczak, Gosia
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1953
since deposited on 2021-10-21
Acq. date: 2025-12-09
Citations
Metrics
Views
1953
since deposited on 2021-10-21
Acq. date: 2025-12-09
Citations