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Properties of ALD HfTaxOy high-k layers deposited on chemical silicon oxide

Date

2007
Journal article
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dc.contributor.authorZhao, Chao
dc.contributor.authorWitters, Thomas
dc.contributor.authorBreimer, P.
dc.contributor.authorMaes, Jan
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T22:02:03Z
dc.date.available2021-10-16T22:02:03Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13269
dc.source.beginpage7
dc.source.endpage10
dc.source.issue1
dc.source.journalMicroelectronic Engineering
dc.source.volume84
dc.title

Properties of ALD HfTaxOy high-k layers deposited on chemical silicon oxide

dc.typeJournal article
dspace.entity.typePublication
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