Al2O3 surface passivation characterized on hydrophobic and hydrophilic c-Si by a combination of QSSPC, CV, XPS and FTIR

dc.contributor.author	Goverde, Hans
dc.contributor.author	Vermang, Bart
dc.contributor.author	Morato, Alessandro
dc.contributor.author	John, Joachim
dc.contributor.author	Horzel, Jörg
dc.contributor.author	Meneghesso, Gaudenzio
dc.contributor.author	Poortmans, Jef
dc.contributor.imecauthor	Vermang, Bart
dc.contributor.imecauthor	John, Joachim
dc.contributor.imecauthor	Poortmans, Jef
dc.contributor.orcidimec	Vermang, Bart::0000-0003-2669-2087
dc.contributor.orcidimec	Poortmans, Jef::0000-0003-2077-2545
dc.date.accessioned	2021-10-20T11:18:29Z
dc.date.available	2021-10-20T11:18:29Z
dc.date.issued	2012
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/20746
dc.identifier.url	http://www.sciencedirect.com/science/article/pii/S1876610212012891
dc.source.beginpage	355
dc.source.conference	Proceedings of the 2nd International Conference on Crystalline Silicon Photovoltaics - Silicon PV
dc.source.conferencedate	3/04/2012
dc.source.conferencelocation	Leuven Belgium
dc.source.endpage	360
dc.title	Al2O3 surface passivation characterized on hydrophobic and hydrophilic c-Si by a combination of QSSPC, CV, XPS and FTIR
dc.type	Proceedings paper
dspace.entity.type	Publication
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