Publication:

InGaAs/GaAs Nano-Ridge Laser Based on Bound States in the Continuum Epitaxially Grown on a Si

Date

2025
Proceedings Paper
https://doi.org/10.1109/SiPhotonics64386.2025.10985097
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dc.contributor.authorFahmy, Eslam
dc.contributor.authorOuyang, Zhongtao
dc.contributor.authorColucci, Davide
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorKunert, Bernardette
dc.contributor.authorVan Thourhout, Dries
dc.date.accessioned2026-03-19T14:34:21Z
dc.date.available2026-03-19T14:34:21Z
dc.date.createdwos2025-09-26
dc.date.issued2025
dc.description.abstractWe demonstrate a novel vertically emitting nano-ridge laser epitaxially grown on a 300-mm silicon wafer. By leveraging the concept of bound states in the continuum (BICs), we achieve confined optical modes with high Q-factors within the structure. We experimentally show low threshold lasing (10 kW/cm2).
dc.description.wosFundingTextThis project has received funding from the European Union's Horizon 2020 research and innovation program under grant agreement No. 884963 (ERC AdG NARIOS).
dc.identifier.doi10.1109/SiPhotonics64386.2025.10985097
dc.identifier.isbn979-8-3315-0619-3
dc.identifier.issn1949-2081
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/58881
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE
dc.source.beginpageN/A
dc.source.conferenceIEEE Silicon Photonics Conference (SiPhotonics)
dc.source.conferencedate2025-04-14
dc.source.conferencelocationLondon
dc.source.journal2025 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS
dc.source.numberofpages2
dc.title

InGaAs/GaAs Nano-Ridge Laser Based on Bound States in the Continuum Epitaxially Grown on a Si

dc.typeProceedings paper
dspace.entity.typePublication
imec.identified.statusLibrary
imec.internal.crawledAt2025-10-22
imec.internal.sourcecrawler
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