Publication:

Low-frequency noise assessment of silicon passivated Ge pMOSFETs with TiN/TaN/HfO2 gate stack

Date

2007
Journal article
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dc.contributor.authorGuo, Wei
dc.contributor.authorNicholas, Gareth
dc.contributor.authorKaczer, Ben
dc.contributor.authorTodi, Ravi
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorClaeys, Cor
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorCretu, B.
dc.contributor.authorRoutoure, J.M.
dc.contributor.authorCarin, R.
dc.contributor.imecauthorGuo, Wei
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-16T16:26:36Z
dc.date.available2021-10-16T16:26:36Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12240
dc.source.beginpage288
dc.source.endpage291
dc.source.issue4
dc.source.journalIEEE Electron Device Letters
dc.source.volume28
dc.title

Low-frequency noise assessment of silicon passivated Ge pMOSFETs with TiN/TaN/HfO2 gate stack

dc.typeJournal article
dspace.entity.typePublication
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