Impact of layer alignment on the behavior of MoS 2- ZrS 2 tunnel field-effect transistors: an ab initio study

dc.contributor.author	Lu, Augustin
dc.contributor.author	Houssa, Michel
dc.contributor.author	Luisier, Mathieu
dc.contributor.author	Pourtois, Geoffrey
dc.contributor.imecauthor	Houssa, Michel
dc.contributor.imecauthor	Pourtois, Geoffrey
dc.contributor.orcidimec	Houssa, Michel::0000-0003-1844-3515
dc.contributor.orcidimec	Pourtois, Geoffrey::0000-0003-2597-8534
dc.date.accessioned	2021-10-24T08:18:51Z
dc.date.available	2021-10-24T08:18:51Z
dc.date.issued	2017
dc.identifier.issn	2331-7019
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/28863
dc.identifier.url	https://doi.org/10.1103/PhysRevApplied.8.034017
dc.source.beginpage	34017
dc.source.issue	3
dc.source.journal	Physical Review Applied
dc.source.volume	8
dc.title	Impact of layer alignment on the behavior of MoS 2- ZrS 2 tunnel field-effect transistors: an ab initio study
dc.type	Journal article
dspace.entity.type	Publication
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