Publication:

Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics

Date

2007
Journal article
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dc.contributor.authorZhao, C.Z.
dc.contributor.authorZahid, M.B.
dc.contributor.authorZhang, J.F.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDegraeve, Robin
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T22:00:25Z
dc.date.available2021-10-16T22:00:25Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13265
dc.source.beginpage143502
dc.source.issue14
dc.source.journalApplied Physics Letters
dc.source.volume90
dc.title

Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics

dc.typeJournal article
dspace.entity.typePublication
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