Publication:

Integration of a 90nm RF CMOS technology (200GHz fmax - 150GHz fT NMOS) demonstrated on a 5GHz LNA

Date

 
dc.contributor.authorJeamsaksiri, Wutthinan
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorRamos, Javier
dc.contributor.authorLinten, Dimitri
dc.contributor.authorThijs, Steven
dc.contributor.authorJenei, Snezana
dc.contributor.authorDetcheverry, Celine
dc.contributor.authorWambacq, Piet
dc.contributor.authorVelghe, Rudolf
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorWambacq, Piet
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecWambacq, Piet::0000-0003-4388-7257
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-15T14:03:27Z
dc.date.available2021-10-15T14:03:27Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9095
dc.source.beginpage100
dc.source.conferenceTechnical Digest VLSI Technology Symposium
dc.source.conferencedate15/06/2004
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage101
dc.title

Integration of a 90nm RF CMOS technology (200GHz fmax - 150GHz fT NMOS) demonstrated on a 5GHz LNA

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections: