Publication:

Lifetime and leakage current studies in shallow p-n junctions fabricated in a high-energy boron implanted p-well

Date

2000
Proceedings Paper
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dc.contributor.authorPoyai, Amporn
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorRooyackers, Rita
dc.contributor.authorBadenes, Gonçal
dc.contributor.authorGaubas, Eugenijus
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-14T13:36:29Z
dc.date.available2021-10-14T13:36:29Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4676
dc.source.beginpage403
dc.source.conferenceHigh Purity Silicon VI
dc.source.conferencedate22/10/2000
dc.source.conferencelocationPhoenix, AZ USA
dc.source.endpage413
dc.title

Lifetime and leakage current studies in shallow p-n junctions fabricated in a high-energy boron implanted p-well

dc.typeProceedings paper
dspace.entity.typePublication
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