Publication:

Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

Date

2011
Journal article
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dc.contributor.authorRampelberg, Geert
dc.contributor.authorSchaekers, Marc
dc.contributor.authorMartens, Koen
dc.contributor.authorXie, Qi
dc.contributor.authorDeduytsche, Davy
dc.contributor.authorDe Schutter, Bob
dc.contributor.authorBlasco, Nicolas
dc.contributor.authorKittl, Jorge
dc.contributor.authorDetavernier, Christophe
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorXie, Qi
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.date.accessioned2021-10-19T17:54:35Z
dc.date.available2021-10-19T17:54:35Z
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19656
dc.source.beginpage162902
dc.source.issue16
dc.source.journalApplied Physics Letters
dc.source.volume98
dc.title

Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

dc.typeJournal article
dspace.entity.typePublication
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