Publication:
Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si
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1840 since deposited on 2021-10-27
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Acq. date: 2026-01-09
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1840 since deposited on 2021-10-27
2last month
2last week
Acq. date: 2026-01-09
Citations