Publication:

Enabling porous low-k dielectric sealing against CVD Mn indiffusion in 22nm half-pitch (dual) damascene interconnects by deposition of sub-1nm thin organic films: from fundamentals to reliability

Date

2017
Proceedings Paper
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dc.contributor.authorArmini, Silvia
dc.contributor.authorLesniewska, Alicja
dc.contributor.authorJourdan, Nicolas
dc.contributor.authorDelande, Tinne
dc.contributor.authorVega Gonzalez, Victor
dc.contributor.authorWilson, Chris
dc.contributor.authorStruyf, Herbert
dc.contributor.authorTokei, Zsolt
dc.contributor.imecauthorArmini, Silvia
dc.contributor.imecauthorLesniewska, Alicja
dc.contributor.imecauthorJourdan, Nicolas
dc.contributor.imecauthorDelande, Tinne
dc.contributor.imecauthorVega Gonzalez, Victor
dc.contributor.imecauthorWilson, Chris
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.orcidimecArmini, Silvia::0000-0003-0578-3422
dc.contributor.orcidimecLesniewska, Alicja::0000-0003-3863-065X
dc.date.accessioned2021-10-24T02:53:11Z
dc.date.available2021-10-24T02:53:11Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27765
dc.source.beginpage1
dc.source.conferenceIEEE International Interconnect Technology Conference - IITC
dc.source.conferencedate16/05/2017
dc.source.conferencelocationHsinchu Taiwan
dc.source.endpage4
dc.title

Enabling porous low-k dielectric sealing against CVD Mn indiffusion in 22nm half-pitch (dual) damascene interconnects by deposition of sub-1nm thin organic films: from fundamentals to reliability

dc.typeProceedings paper
dspace.entity.typePublication
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