Publication:

Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

Date

2008
Proceedings Paper
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dc.contributor.authorDelabie, Annelies
dc.contributor.authorAlian, AliReza
dc.contributor.authorBellenger, Florence
dc.contributor.authorBrammertz, Guy
dc.contributor.authorBrunco, David
dc.contributor.authorCaymax, Matty
dc.contributor.authorConard, Thierry
dc.contributor.authorFranquet, Alexis
dc.contributor.authorHoussa, Michel
dc.contributor.authorSioncke, Sonja
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorvan Hemmen, J.L.
dc.contributor.authorKeuning, W.
dc.contributor.authorKessels, W.M.M.
dc.contributor.authorAfanas'ev, V.V.
dc.contributor.authorStesmans, Andre
dc.contributor.authorHeyns, Marc
dc.contributor.authorMeuris, Marc
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T06:51:54Z
dc.date.available2021-10-17T06:51:54Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13648
dc.source.beginpage671
dc.source.conferenceSiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI Hawai
dc.source.endpage685
dc.title

Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

dc.typeProceedings paper
dspace.entity.typePublication
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