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Effects on the HE implantation energy on the strain relaxation of epitaxial Si0.8Ge0.2/Si(100) heterostructures
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Effects on the HE implantation energy on the strain relaxation of epitaxial Si0.8Ge0.2/Si(100) heterostructures
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Date
2004
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Morschbacher, Mario
;
da Silva, Douglas
;
Fichtner, Paulo
;
Zawislak, Fernando
;
Hollaender, Bernd
;
Luysberg, Martina
;
Mantl, Siegfried
;
Caymax, Matty
;
Loo, Roger
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1908
since deposited on 2021-10-15
Acq. date: 2025-12-10
Citations
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Views
1908
since deposited on 2021-10-15
Acq. date: 2025-12-10
Citations