Publication:

Hot carrier damage effects on the parameters of random telegraph signals in small-area MOSFETs

Date

1996
Proceedings Paper
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-09-29T15:25:17Z
dc.date.available2021-09-29T15:25:17Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1483
dc.source.beginpage477
dc.source.conferenceProceedings of the 3rd International Symposium on the Physics and Chemistry of SiO2 and the SiO2 Interface
dc.source.conferencedate5/05/1996
dc.source.conferencelocationLos Angeles, CA USA
dc.source.endpage484
dc.title

Hot carrier damage effects on the parameters of random telegraph signals in small-area MOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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