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Development of a GaN epi-stack on 200mm Si (111) for semi-vertical power devices

Date

2017
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dc.contributor.authorLiang, Hu
dc.contributor.authorStoffels, Steve
dc.contributor.authorGeens, Karen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-24T07:55:44Z
dc.date.available2021-10-24T07:55:44Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28816
dc.identifier.urlhttp://www.european-mrs.com/sites/default/files/pdf/icns12_-_full_program.pdf
dc.source.conference12th International Conference on Nitride Semiconductors - ICNS
dc.source.conferencedate24/07/2017
dc.source.conferencelocationStrasbourg France
dc.title

Development of a GaN epi-stack on 200mm Si (111) for semi-vertical power devices

dc.typeOral presentation
dspace.entity.typePublication
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