Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si

dc.contributor.author	Afanas'ev, V. V.
dc.contributor.author	Houssa, Michel
dc.contributor.author	Stesmans, Andre
dc.contributor.author	Heyns, Marc
dc.contributor.imecauthor	Houssa, Michel
dc.contributor.imecauthor	Stesmans, Andre
dc.contributor.imecauthor	Heyns, Marc
dc.contributor.orcidimec	Houssa, Michel::0000-0003-1844-3515
dc.date.accessioned	2021-10-14T16:36:07Z
dc.date.available	2021-10-14T16:36:07Z
dc.date.issued	2001
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/5008
dc.source.conference	Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.
dc.source.conferencelocation
dc.title	Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si
dc.type	Oral presentation
dspace.entity.type	Publication
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