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Structural and electrical properties of low temperature CVD-grown SiGe epitaxial layers

Date

2016
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dc.contributor.authorIke, Shinichi
dc.contributor.authorSimoen, Eddy
dc.contributor.authorShimura, Yosuke
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.contributor.authorTakeuchi, Wakana
dc.contributor.authorNakatsuka, Osamu
dc.contributor.authorZaima, Shigeaki
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-23T11:27:31Z
dc.date.available2021-10-23T11:27:31Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26764
dc.source.conference9th International Workdhop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically
dc.source.conferencedate11/01/2016
dc.source.conferencelocationSendai Japan
dc.title

Structural and electrical properties of low temperature CVD-grown SiGe epitaxial layers

dc.typeMeeting abstract
dspace.entity.typePublication
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