Publication:

Investigation on carrier transport through AlN nucleation layer from differently doped Si(111) substrates

Date

2018
Journal article
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dc.contributor.authorLi, Xiangdong
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorZhao, Ming
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorYou, Shuzhen
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-25T21:58:20Z
dc.date.available2021-10-25T21:58:20Z
dc.date.issued2018
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31173
dc.identifier.urlhttps://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8315113
dc.source.beginpage1721
dc.source.endpage1727
dc.source.issue5
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume65
dc.title

Investigation on carrier transport through AlN nucleation layer from differently doped Si(111) substrates

dc.typeJournal article
dspace.entity.typePublication
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