Radiation damage in npn Si transistors due to high-temperature gamma-ray and 1-MeV electron irradiation

dc.contributor.author	Ohyama, Hidenori
dc.contributor.author	Hirao, T.
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Claeys, Cor
dc.contributor.author	Nakabayashi, M.
dc.contributor.author	Onoda, S.
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-14T22:36:42Z
dc.date.available	2021-10-14T22:36:42Z
dc.date.issued	2002
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/6666
dc.source.beginpage	465
dc.source.conference	GADEST 2001 - Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology;
dc.source.conferencelocation	S. Tecla Italy
dc.source.endpage	470
dc.title	Radiation damage in npn Si transistors due to high-temperature gamma-ray and 1-MeV electron irradiation
dc.type	Proceedings paper
dspace.entity.type	Publication
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