A complementary high-voltage technology based on n-type CdSe:In and p-type Ge:Cu thin film transistors

dc.contributor.author	De Cubber, A. M.
dc.contributor.author	De Smet, Herbert
dc.contributor.author	De Vos, Joeri
dc.contributor.author	Carchon, Nadine
dc.contributor.author	Van Calster, Andre
dc.contributor.imecauthor	De Smet, Herbert
dc.contributor.imecauthor	De Vos, Joeri
dc.contributor.imecauthor	Carchon, Nadine
dc.contributor.imecauthor	Van Calster, Andre
dc.date.accessioned	2021-09-29T14:22:15Z
dc.date.available	2021-09-29T14:22:15Z
dc.date.embargo	9999-12-31
dc.date.issued	1996
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/1158
dc.source.beginpage	581
dc.source.endpage	583
dc.source.issue	12
dc.source.journal	IEEE Electron Device Letters
dc.source.volume	17
dc.title	A complementary high-voltage technology based on n-type CdSe:In and p-type Ge:Cu thin film transistors
dc.type	Journal article
dspace.entity.type	Publication
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