Publication:
Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers
| dc.contributor.author | Baptista Junior, Braz | |
| dc.contributor.author | Cano de Andrade, Maria Gloria | |
| dc.contributor.author | de Oliveira Bergamim, Luis Felipe | |
| dc.contributor.author | Nogueira, Carlos Roberto | |
| dc.contributor.author | Abud, Renan Baptista | |
| dc.contributor.author | Simoen, Eddy | |
| dc.contributor.imecauthor | Simoen, Eddy | |
| dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
| dc.date.accessioned | 2023-06-13T09:11:11Z | |
| dc.date.available | 2023-02-27T03:28:49Z | |
| dc.date.available | 2023-06-13T09:11:11Z | |
| dc.date.issued | 2022 | |
| dc.description.wosFundingText | The authors would like to acknowledge the Brazilian research-funding agency CAPES for the support for developing this work. The authors thank imec ARF team in for having provided the samples studied in this work and Bertrand Parvais for your all suggestions in this paper. | |
| dc.identifier.doi | 10.1109/LAEDC54796.2022.9908239 | |
| dc.identifier.eisbn | 978-1-6654-9767-1 | |
| dc.identifier.issn | na | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/41192 | |
| dc.publisher | IEEE | |
| dc.source.conference | IEEE Latin American Electron Devices Conference (LAEDC) | |
| dc.source.conferencedate | JUL 04-06, 2022 | |
| dc.source.conferencelocation | Puebla | |
| dc.source.journal | na | |
| dc.source.numberofpages | 4 | |
| dc.title | Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
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