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Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics

Date

2008
Journal article
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dc.contributor.authorAguilera, Lidia
dc.contributor.authorPolspoel, Wouter
dc.contributor.authorVolodin, Alexander
dc.contributor.authorVan Haesendonck, Chris
dc.contributor.authorPorti, Marc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorNafria, Montserrat
dc.contributor.authorAymerich, Xavier
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.accessioned2021-10-17T06:13:32Z
dc.date.available2021-10-17T06:13:32Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.issn1071-1023
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13295
dc.source.beginpage1445
dc.source.endpage1449
dc.source.issue4
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.volume26
dc.title

Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics

dc.typeJournal article
dspace.entity.typePublication
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