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A comprehensive study of boron and carbon diffusion models in SiGeC heterojunction bipolar transistors

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dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMaes, Herman
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-16T05:02:49Z
dc.date.available2021-10-16T05:02:49Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11202
dc.source.beginpage063530-1
dc.source.endpage063530-9
dc.source.issue6
dc.source.journalJournal of Applied Physics
dc.source.volume98
dc.title

A comprehensive study of boron and carbon diffusion models in SiGeC heterojunction bipolar transistors

dc.typeJournal article
dspace.entity.typePublication
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