Publication:

Characterization of FOWLP Process using Temporary Bonding Materials on Carrier with Very Low Die Shift

Date

2025
Proceedings Paper
https://doi.org/10.1109/ECTC51687.2025.00346
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dc.contributor.authorTang, Tiffany
dc.contributor.authorGuerrero, Alice
dc.contributor.authorCuypers, Dieter
dc.contributor.authorMacours, Maarten
dc.contributor.authorVaquilar, Aldrin
dc.contributor.authorBex, Pieter
dc.contributor.authorKennes, Koen
dc.contributor.authorPhommahaxay, Alain
dc.contributor.authorBeyer, Gerald
dc.contributor.authorBeyne, Eric
dc.date.accessioned2026-03-24T13:47:31Z
dc.date.available2026-03-24T13:47:31Z
dc.date.createdwos2025-10-31
dc.date.issued2025
dc.description.abstractThis study aims to link several epoxy mold compound (EMC) material properties to warpage and die-shift that are typically present in a fanout wafer level packaging process flow with RDL last process conditions. Two EMC compounds with different CTE, Tg, and modulus are evaluated and compared for warpage and die-shift performance on a next generation temporary bonding material (TBM). A low CTE and high Tg seem to be very beneficial to achieve low warpage on blanket mold on TBM wafers. When dies are embedded, the modulus plays a major role in order to mitigate thermal stresses that occur due to the Si-mold CTE mismatch during molding.
dc.description.wosFundingTextThis work has been enabled in part by the NanoIC pilot line. The acquisition and operation are jointly funded by the Chips Joint Undertaking, through the European Union's Digital Europe (101183266) and Horizon Europe programs (101183277), as well as by the participating states Belgium (Flanders), France, Germany, Finland, Ireland and Romania. For more information, visit nanoic-project.eu."As set out in the Grant Agreement, beneficiaries must ensure Open Access at the time of publication to the published version or the final peerreviewed manuscript accepted for publication. For the purpose of Open Access the author has applied a CC BY public copyright licence to any Author Accepted Manuscript version arising from this submission.
dc.identifier.doi10.1109/ECTC51687.2025.00346
dc.identifier.isbn979-8-3315-3933-7
dc.identifier.issn0569-5503
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/58932
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE COMPUTER SOC
dc.source.beginpage2022
dc.source.conferenceIEEE 75th Electronic Components and Technology Conference (ECTC)
dc.source.conferencedate2025-03-27
dc.source.conferencelocationDallas
dc.source.endpage2027
dc.source.journal2025 IEEE 75TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC
dc.source.numberofpages6
dc.title

Characterization of FOWLP Process using Temporary Bonding Materials on Carrier with Very Low Die Shift

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2025-10-22
imec.internal.sourcecrawler
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