Publication:

Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process

Date

2019
Journal article
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dc.contributor.authorYamashita, Yuki
dc.contributor.authorStoffels, Steve
dc.contributor.authorPosthuma, Niels
dc.contributor.authorGeens, Karen
dc.contributor.authorLi, Xiangdong
dc.contributor.authorFuruta, Jun
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorKobayashi, Kazutoshi
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-27T23:57:55Z
dc.date.available2021-10-27T23:57:55Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.issn1349-2543
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34478
dc.identifier.urlhttps://doi.org/10.1587/elex.16.20190516
dc.source.beginpage20190516
dc.source.issue22
dc.source.journalIEICE Electronics Express
dc.source.volume16
dc.title

Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process

dc.typeJournal article
dspace.entity.typePublication
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