Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors

dc.contributor.author	Wach, Filip
dc.contributor.author	Uren, Michael J.
dc.contributor.author	Bakeroot, Benoit
dc.contributor.author	Zhao, Ming
dc.contributor.author	Decoutere, Stefaan
dc.contributor.author	Kuball, Martin
dc.contributor.imecauthor	Bakeroot, Benoit
dc.contributor.imecauthor	Zhao, Ming
dc.contributor.imecauthor	Decoutere, Stefaan
dc.contributor.orcidimec	Bakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimec	Zhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimec	Decoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned	2021-10-29T07:41:28Z
dc.date.available	2021-10-29T07:41:28Z
dc.date.embargo	9999-12-31
dc.date.issued	2020
dc.identifier.issn	0741-3106
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/36292
dc.identifier.url	https://ieeexplore.ieee.org/document/9220913
dc.source.beginpage	1754
dc.source.endpage	1757
dc.source.issue	12
dc.source.journal	IEEE Electron Device Letters
dc.source.volume	41
dc.title	Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors
dc.type	Journal article
dspace.entity.type	Publication
Files	Original bundle Name: 47513.pdf Size: 1.49 MB Format: Adobe Portable Document Format Download
Publication available in collections:	Articles

Date