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Impact of interface states on mobility and threshold voltage of Si-passivated Ge MOSFETs

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dc.contributor.authorMartens, Koen
dc.contributor.authorMitard, Jerome
dc.contributor.authorLeys, Frederik
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorKaczer, Ben
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-17T08:51:59Z
dc.date.available2021-10-17T08:51:59Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14133
dc.source.conferenceIEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate11/12/2008
dc.source.conferencelocationSan Diego, CA USA
dc.title

Impact of interface states on mobility and threshold voltage of Si-passivated Ge MOSFETs

dc.typeMeeting abstract
dspace.entity.typePublication
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