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Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures

Date

2016
Journal article
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dc.contributor.authorVinicius de Oliveira, Alberto
dc.contributor.authorAgopian, Paula Ghedini Der
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-23T16:52:11Z
dc.date.available2021-10-23T16:52:11Z
dc.date.issued2016
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27551
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0038110116300351
dc.source.beginpage124
dc.source.endpage129
dc.source.journalSolid-State Electronics
dc.source.volume123
dc.title

Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures

dc.typeJournal article
dspace.entity.typePublication
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