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Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN HFETs by Si substrate removal

Date

2010
Journal article
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dc.contributor.authorVisalli, Domenica
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorSrivastava, Puneet
dc.contributor.authorDerluyn, Joff
dc.contributor.authorDas, Jo
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorCheng, Kai
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-19T00:04:49Z
dc.date.available2021-10-19T00:04:49Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18307
dc.source.beginpage113501
dc.source.issue11
dc.source.journalApplied Physics Letters
dc.source.volume97
dc.title

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN HFETs by Si substrate removal

dc.typeJournal article
dspace.entity.typePublication
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