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Selective epitaxial growth of Ge on silicon wafers with shallow trench isolation: an approach for Ge virual substrates
Publication:
Selective epitaxial growth of Ge on silicon wafers with shallow trench isolation: an approach for Ge virual substrates
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Date
2008
Proceedings Paper
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16728.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wang, Gang
;
Leys, Frederik
;
Souriau, Laurent
;
Loo, Roger
;
Caymax, Matty
;
Brunco, D
;
Geypen, Jef
;
Bender, Hugo
;
Meuris, Marc
;
Vandervorst, Wilfried
;
Heyns, Marc
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Views
1805
since deposited on 2021-10-17
1
last month
Acq. date: 2025-12-17
Citations