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A 2-D analytical threshold voltage model for fully-depleted SOI MOSFETs with halos or pockets

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dc.contributor.authorvan Meer, Hans
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.accessioned2021-10-14T18:05:33Z
dc.date.available2021-10-14T18:05:33Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5741
dc.source.beginpage2292
dc.source.endpage2302
dc.source.issue10
dc.source.journalIEEE Trans. Electron Devices
dc.source.volume48
dc.title

A 2-D analytical threshold voltage model for fully-depleted SOI MOSFETs with halos or pockets

dc.typeJournal article
dspace.entity.typePublication
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