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RF Equivalent Circuit Model for GeSi Quantum Confined Stark Effect Electro-Absorption Modulators

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dc.contributor.authorKandeel, Ahmed
dc.contributor.authorKim, Minkyu
dc.contributor.authorShahin, Amir
dc.contributor.authorDe Heyn, Peter
dc.contributor.authorTseng, Chih-Kuo Neil
dc.contributor.authorVaskasi, Javad Rahimi
dc.contributor.authorShimura, Yosuke
dc.contributor.authorChakrabarti, Maumita
dc.contributor.authorVelenis, Dimitrios
dc.contributor.authorVan Thourhout, Dries
dc.contributor.authorFerraro, Filippo
dc.contributor.authorBan, Yoojin
dc.contributor.authorVan Campenhout, Joris
dc.contributor.imecauthorKandeel, Ahmed
dc.contributor.imecauthorKim, Minkyu
dc.contributor.imecauthorShahin, Amir
dc.contributor.imecauthorDe Heyn, Peter
dc.contributor.imecauthorTseng, Chih-Kuo Neil
dc.contributor.imecauthorVaskasi, Javad Rahimi
dc.contributor.imecauthorShimura, Yosuke
dc.contributor.imecauthorChakrabarti, Maumita
dc.contributor.imecauthorVelenis, Dimitrios
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.imecauthorFerraro, Filippo
dc.contributor.imecauthorBan, Yoojin
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.orcidimecKim, Minkyu::0000-0002-8999-2303
dc.contributor.orcidimecShahin, Amir::0000-0001-5657-1791
dc.contributor.orcidimecDe Heyn, Peter::0000-0003-3523-7377
dc.contributor.orcidimecShimura, Yosuke::0000-0002-1944-9970
dc.contributor.orcidimecChakrabarti, Maumita::0000-0003-4584-0399
dc.contributor.orcidimecVelenis, Dimitrios::0000-0001-7947-8098
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.contributor.orcidimecFerraro, Filippo::0000-0002-9328-5548
dc.contributor.orcidimecBan, Yoojin::0000-0001-7319-8132
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.date.accessioned2025-03-30T05:11:05Z
dc.date.available2025-03-30T05:11:05Z
dc.date.issued2025-APR 1
dc.description.wosFundingTextThis project has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 101017194 (SIPHO-G).
dc.identifier.doi10.1109/LPT.2025.3549943
dc.identifier.issn1041-1135
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45456
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage421
dc.source.endpage424
dc.source.issue7
dc.source.journalIEEE PHOTONICS TECHNOLOGY LETTERS
dc.source.numberofpages4
dc.source.volume37
dc.title

RF Equivalent Circuit Model for GeSi Quantum Confined Stark Effect Electro-Absorption Modulators

dc.typeJournal article
dspace.entity.typePublication
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