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Role of local chemical potential of Cu on data retention properties of Cu-based conductive-bridge RAM

Date

2016
Journal article
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dc.contributor.authorWoo, Jiyong
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorHwang, Hyunsang
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGoux, Ludovic
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-23T17:15:51Z
dc.date.available2021-10-23T17:15:51Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27597
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7355331
dc.source.beginpage173
dc.source.endpage175
dc.source.issue2
dc.source.journalIEEE Electron Device Letters
dc.source.volume37
dc.title

Role of local chemical potential of Cu on data retention properties of Cu-based conductive-bridge RAM

dc.typeJournal article
dspace.entity.typePublication
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