Publication:
200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
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2030 since deposited on 2021-10-24
Acq. date: 2025-12-07
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2030 since deposited on 2021-10-24
Acq. date: 2025-12-07
Citations